IPP100N04S2-04 Infineon Technologies, IPP100N04S2-04 Datasheet - Page 5

MOSFET N-CH 40V 100A TO220-3

IPP100N04S2-04

Manufacturer Part Number
IPP100N04S2-04
Description
MOSFET N-CH 40V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N04S2-04

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
172nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.6 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219056

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP100N04S2-04
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
400
350
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C
10V
2
= 6V
2
175 °C
3
4
V
25 °C
V
DS
GS
4
6.0V
5.5V
5.0V
[V]
[V]
6.5V
-55 °C
6
5
8
6
page 5
10
7
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
200
150
100
12
10
50
8
6
4
2
0
0
= (I
D
0
); T
0
D
); T
j
= 25°C
fs
GS
20
j
= 25 °C
50
40
I
I
D
D
100
60
[A]
[A]
IPB100N04S2-04
IPP100N04S2-04
5.5V
80
150
100
2006-03-02
6V
10V
6.5V
120
200

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