IPP100N04S2L-03 Infineon Technologies, IPP100N04S2L-03 Datasheet - Page 4

• Manufacturer Part Number: IPP100N04S2L-03
• Description: MOSFET N-CH 40V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N04S2L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000219062

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
1000
= f(T
100
350
300
250
200
150
100
10
50
1
0
0.1
DS
0
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 4 V
50
1
V
T
C
DS
100
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
120
100
10
10
10
80
60
40
20
= f(t
10
0
-1
-2
-3
0
C
10
0
); V
p
-7
0.05
)
0.01
0.1
0.5
GS
10
≥ 10 V
p
-6
single pulse
/T
50
10
-5
10
T
t
-4
100
C
p
[°C]
[s]
10
IPB100N04S2L-03
IPP100N04S2L-03
-3
10
150
-2
10
2006-03-02
-1
200
10
0