IPP100N04S2L-03 Infineon Technologies, IPP100N04S2L-03 Datasheet - Page 5

• Manufacturer Part Number: IPP100N04S2L-03
• Description: MOSFET N-CH 40V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N04S2L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000219062

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C
= 6V
2
2
4
175 °C
V
V
DS
GS
25 °C
3.5 V
3 V
2.5 V
[V]
[V]
4 V
6
-55 °C
3
8
page 5
10
4
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
300
250
200
150
100
20
18
16
14
12
10
50
8
6
4
2
0
0
= (I
D
); T
0
0
D
); T
j
= 25°C
fs
GS
3 V
20
j
= 25 °C
50
40
I
I
D
D
100
60
[A]
[A]
IPB100N04S2L-03
IPP100N04S2L-03
3.5 V
80
150
100
2006-03-02
4 V
4.5 V
10 V
120
200