SPP11N60C3 Infineon Technologies, SPP11N60C3 Datasheet

MOSFET N-CH 650V 11A TO-220AB

SPP11N60C3

Manufacturer Part Number
SPP11N60C3
Description
MOSFET N-CH 650V 11A TO-220AB
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPP11N60C3

Package / Case
TO-220AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013526
SPP11N60C3IN
SPP11N60C3X
SPP11N60C3XIN
SPP11N60C3XIN
SPP11N60C3XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPP11N60C3
Manufacturer:
INFINEON
Quantity:
4 500
Part Number:
SPP11N60C3
Manufacturer:
INFINEON
Quantity:
50
Part Number:
SPP11N60C3
Manufacturer:
Infineon Technologies
Quantity:
1 818
Part Number:
SPP11N60C3
Manufacturer:
INFINEON
Quantity:
8 000
Part Number:
SPP11N60C3
Manufacturer:
ST
0
Part Number:
SPP11N60C3
0
Company:
Part Number:
SPP11N60C3
Quantity:
6 000
Part Number:
SPP11N60C3XKSA1
Manufacturer:
INFINEON
Quantity:
3 000
Part Number:
SPP11N60C3XKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Cool MOS™ Power Transistor
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
Reverse diode dv/dt
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Rev.
D
D
SPA11N60C3E8185
Type
SPP11N60C3
SPI11N60C3
SPA11N60C3
C
C
=5.5A, V
=11A, V
Maximum Ratings
Parameter
= 25 °C
= 100 °C
3 . 2
DD
DD
=50V
=50V
T
PG-TO220 FP
C
PG-TO220
PG-TO262
Package
PG-TO220
7)
= 25°C
p
limited by T
AR
AR
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
limited by T
limited by T
jmax
Ordering Code
Q67040-S4395
Q67042-S4403
Q67040-S4408
Q67040-S4408
jmax
jmax
Page 1
PG-TO220FP
P-TO220-3-31
2)
Symbol
I
I
E
E
I
V
V
P
T
dv/dt
D
D puls
AR
j ,
AS
AR
GS
GS
tot
T
Marking
11N60C3
11N60C3
11N60C3
11N60C3
11N60C3
stg
1
2
3
PG-TO262
V
SPP_I
DS
R
340
±20
±30
125
0.6
DS(on)
11
33
11
@ T
7
I
D
-55...+150
Value
jmax
15
SPP11N60C3
SPA
11
340
±20
±30
2009-11-27
PG-TO220
0.6
7
33
11
33
0.38
650
1)
11
1)
V/ns
Unit
A
A
mJ
A
V
W
°C
V
A

Related parts for SPP11N60C3

SPP11N60C3 Summary of contents

Page 1

... SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP P-TO220-3-31 Ordering Code Q67040-S4395 Q67042-S4403 Q67040-S4408 Q67040-S4408 Symbol jmax D puls limited jmax limited jmax tot dv/dt Page 1 SPP11N60C3 650 DS jmax R 0.38 DS(on PG-TO262 PG-TO220 Marking 11N60C3 11N60C3 11N60C3 11N60C3 11N60C3 Value SPA SPP_I 340 340 0.6 ...

Page 2

... V V =0V, I =11A (BR) =500µ GS(th =600V, V DSS =25° =150° =30V, V =0V GSS =10V, I =7A DS(on =25° =150° f=1MHz, open drain G Page 2 SPP11N60C3 Value 50 Values min. typ. max 3 260 Values min. typ. max. 600 - - - 700 - 2.1 3 3.9 =0V 100 ...

Page 3

... C o(tr =380V, V d(on =11A =6.8Ω G d(off =480V, I =11A =480V, I =11A 10V =480V, I =11A DD D (plateau) Page 3 SPP11N60C3 Values min. typ. max 1200 - 390 - =0/10V 5 5 while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS 2009-11-27 ...

Page 4

... Unit Symbol SPA 0.15 K/W C th1 0.03 C th2 0.056 C th3 0.194 C th4 0.413 C th5 2.522 C th6 th1 th th1 th2 th,n Page 4 SPP11N60C3 Values min. typ 400 = 1200 Value SPP_I SPA 0.0001878 0.0001878 0.0007106 0.0007106 0.000988 0.000988 0.002791 0.002791 0.007285 0.007401 ...

Page 5

... SPP11N60C3 140 W 120 110 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 2 Power dissipation FullPAK tot 100 120 °C 160 Safe operating area FullPAK parameter Page 5 SPP11N60C3 ) 100 120 ) DS = 25° 0.001 0. 0 2009-11-27 160 ° ...

Page 6

... DS j parameter µ 20V A 10V Rev SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 6 Transient thermal impedance FullPAK thJC parameter single pulse - Typ. output characteristic parameter Page 6 SPP11N60C3 0.01 single pulse - =150° µ 20V 2007-08- 5. ...

Page 7

... Drain-source on-state resistance R DS(on) parameter : I 2.1 Ω 1.8 6V 5.5V 1.6 1.4 1.2 0.8 0.6 0.4 6.5V 8V 0.2 20V Typ. gate charge DS(on)max GS parameter 150° Page 7 SPP11N60C3 = SPP11N60C3 1 98% typ 0 -60 - 100 ) Gate = 11 A pulsed D SPP11N60C3 max 0 °C 180 max Gate 2009-11-27 ...

Page 8

... Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 14 Typ. switching time par 2 Typ. drain current slope =125°C di/dt = f(R j =11 A par 3000 A/µs 2000 td(off) 1500 td(on 1000 Ω Page 8 SPP11N60C3 ), inductive load, T =125° =380V, V =0/+13V td(off td(on inductive load =380V, V ...

Page 9

... V D 0.04 mWs 0.03 0.025 0.02 0.015 0.01 0.005 Ω Avalanche SOA =125° =11A par Eon* Ω Page 9 SPP11N60C3 ), inductive load, T =125° =380V, V =0/+13V Eon includes SPD06S60 diode commutation losses Eon* Eoff ≤ 150 ° =125°C ...

Page 10

... SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 22 Drain-source breakdown voltage V (BR)DSS SPP11N60C3 720 V 680 660 640 620 600 580 560 540 120 °C 160 - Typ. capacitances parameter Page 10 SPP11N60C3 = - 100 °C ) =0V, f=1 MHz GS C iss C oss C rss 100 200 300 400 V 2009-11-27 180 T j 600 V DS ...

Page 11

... Typ. C stored energy oss E =f(V ) oss DS 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1 100 200 300 Definition of diodes switching characteristics . 3 .2 Rev SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 400 600 Page 11 SPP11N60C3 2009-11-27 ...

Page 12

... PG-TO-220-3-1, PG-TO-220-3-21 Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 12 SPP11N60C3 2009-11-27 ...

Page 13

... PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute). Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 13 SPP11N60C3 2009-11-27 ...

Page 14

... PG-TO-262-3-1 (I²-PAK) Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 14 SPP11N60C3 2009-11-27 ...

Page 15

... PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute) Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 15 SPP11N60C3 2009-11-27 ...

Page 16

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 3.2 Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 16 SPP11N60C3 2009-11-27 ...

Related keywords