SPP11N60C3 Infineon Technologies, SPP11N60C3 Datasheet - Page 14

• Manufacturer Part Number: SPP11N60C3
• Description: MOSFET N-CH 650V 11A TO-220AB
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP11N60C3

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013526; SPP11N60C3IN; SPP11N60C3X; SPP11N60C3XIN; SPP11N60C3XIN; SPP11N60C3XK

SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO-262-3-1 (I²-PAK)
Rev. 3.2
2009-11-27
Page 14