IPP045N10N3 G Infineon Technologies, IPP045N10N3 G Datasheet

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IPP045N10N3 G

Manufacturer Part Number
IPP045N10N3 G
Description
MOSFET N-CH 100V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP045N10N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.5 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
3.5V @ 150µA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
8410pF @ 50V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0045 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP045N10N3G
SP000457560
Features
Maximum ratings,
Parameter
Type
Package
Marking
™3
Power-Transistor
T
R
R
Symbol Conditions
I
I
E
V
P
T T
T
T
T
I
T
R
Product Summary
V
R
I
IPB042N10N3 G
Value
IPP045N10N3 G
IPI045N10N3 G
Unit

Related parts for IPP045N10N3 G

IPP045N10N3 G Summary of contents

Page 1

... Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter IPB042N10N3 G Product Summary Symbol Conditions IPI045N10N3 G IPP045N10N3 G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPB042N10N3 G Symbol Conditions IPI045N10N3 G IPP045N10N3 G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode IPB042N10N3 G Symbol Conditions IPI045N10N3 G IPP045N10N3 G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 250 200 150 100 100 T [° Safe operating area [V] DS IPB042N10N3 G 2 Drain current 120 100 150 200 0 4 Max. transient thermal impedance IPI045N10N3 G IPP045N10N3 G 50 100 150 200 T [° [s] p ...

Page 5

... Typ. output characteristics 400 320 240 160 [ Typ. transfer characteristics 200 150 100 [ Typ. drain-source on resistance Typ. forward transconductance 200 160 120 IPB042N10N3 G IPI045N10N3 G IPP045N10N3 100 I [ 100 I [A] D 150 150 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB042N10N3 G IPI045N10N3 G IPP045N10N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage 110 105 100 95 90 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB042N10N3 G IPI045N10N3 G IPP045N10N3 [nC] gate 100 g ate ...

Page 8

... PG-TO220-3: Outline IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G ...

Page 9

... PG-TO262-3 IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G ...

Page 10

... PG-TO-263 (D²-Pak) IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G ...

Page 11

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G ...

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