IPP045N10N3 G Infineon Technologies, IPP045N10N3 G Datasheet - Page 2

• Manufacturer Part Number: IPP045N10N3 G
• Description: MOSFET N-CH 100V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP045N10N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3.5V @ 150µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 8410pF @ 50V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0045 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP045N10N3G; SP000457560

Parameter
Thermal characteristics
Electrical characteristics,
Static characteristics
T
Symbol Conditions
R
R
V
V
I
I
R
R
g
V
V
V
T
V
T
V
V
V
V
V
I
V
V
I R
I
I
I
I
V
I
I
V
V
IPB042N10N3 G
min.
Values
typ.
IPP045N10N3 G
IPI045N10N3 G
max.
Unit