IPB200N25N3 G Infineon Technologies, IPB200N25N3 G Datasheet - Page 5

• Manufacturer Part Number: IPB200N25N3 G
• Description: MOSFET N-CH 250V 64A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB200N25N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 64A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 7100pF @ 100V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 122 S, 61 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 64 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB200N25N3 G; IPB200N25N3 GTR

Rev. 2.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
150
125
100
140
120
100
75
50
25
80
60
40
20
DS
0
GS
0
); T
); |V
0
0
j
=25 °C
DS
GS
j
|>2|I
1
2
D
|R
DS(on)max
175 °C
2
V
V
DS
GS
4
10 V
[V]
[V]
25 °C
7 V
3
5 V
4.5 V
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
180
160
140
120
100
30
25
20
15
10
80
60
40
20
5
0
D
0
=f(I
); T
0
0
D
j
); T
=25 °C
IPB200N25N3 G
GS
20
j
=25 °C
25
40
4.5 V
50
60
I
I
D
D
5 V
[A]
[A]
80
75
IPP200N25N3 G
IPI200N25N3 G
7 V
100
100
10 V
2010-10-19
120
140
125