IRL630S Vishay, IRL630S Datasheet - Page 2

• Manufacturer Part Number: IRL630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRL630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL630S

IRL630S, SiHL630S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
GS
V
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
= 5.0 V
= 4.0 V
J
Reference to 25 °C, I
= 10 V
= 6.0 , R
= 160 V, V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
TEST CONDITIONS
DD
DS
DS
DS
GS
-
-
-
= 100 V, I
F
= 200 V, V
= V
= 50 V, I
= 0 V, I
V
= 9.0 A, dI/dt = 100 A/μs
V
V
GS
DS
S
D
GS
GS
I
GS
D
= 9.0 A, V
= 11 , see fig. 10
= ± 10 V
= 25 V,
, I
= 9.0 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 μA
D
= 250 μA
I
I
GS
= 5.4 A
D
D
= 9.0 A,
= 5.4 A
= 4.5 A
D
= 0 V
GS
J
= 1 mA
DS
= 125 °C
G
G
b
= 0 V
= 160 V,
b
b
MAX.
b
D
S
b
b
D
S
1.7
62
40
b
MIN.
200
1.0
4.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2476-Rev. B, 01-Nov-10
Document Number: 90390
TYP.
1100
0.27
220
230
8.0
4.5
7.5
1.7
70
57
38
33
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.40
0.50
250
350
2.0
5.5
9.0
2.0
2.6
S
25
40
24
36
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V