IRL630S Vishay, IRL630S Datasheet
IRL630S
Specifications of IRL630S
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IRL630S Summary of contents
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... SiHL630S SiHL630STR = 25 °C, unless otherwise noted ° 100 ° ° °C A for 9.0 A (see fig. 12 150 ° IRL630S, SiHL630S Vishay Siliconix Specified and device design, low on-resistance 2 D PAK (TO-263) a SiHL630STRL-GE3 a IRL630STRLPbF a a SiHL630STL- IRL630STRL a a SiHL630STL SYMBOL LIMIT V ...
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... IRL630S, SiHL630S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 90390 S10-2476-Rev. B, 01-Nov-10 2.25V 100 = 25 °C C 2.25V 20μs PULSE WIDTH T = 150° 100 = 150 °C C IRL630S, SiHL630S Vishay Siliconix 100 150° 25° 50V DS 20μs PULSE WIDTH 0.01 2.0 2.5 3.0 3.5 4.0 ...
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... IRL630S, SiHL630S Vishay Siliconix 2000 1MHz iss rss oss ds gd 1500 C iss 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 SHORTED ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90390 S10-2476-Rev. B, 01-Nov-10 Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRL630S, SiHL630S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ...
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... IRL630S, SiHL630S Vishay Siliconix Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 600 TOP 500 BOTTOM 4.0A ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRL630S, SiHL630S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...