IRL630S Vishay, IRL630S Datasheet - Page 4

• Manufacturer Part Number: IRL630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRL630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL630S

IRL630S, SiHL630S
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2000
1500
1000
500
10
0
8
6
4
2
0
1
0
I
D
= 9.0A
V
DS
Q , Total Gate Charge (nC)
V
C
C
C
, Drain-to-Source Voltage (V)
10
G
GS
iss
rss
oss
C
C
C
= 0V,
= C
= C
= C
iss
oss
rss
gs
gd
ds
+ C
+ C
10
20
gd
gd
f = 1MHz
V
V
V
DS
DS
DS
FOR TEST CIRCUIT
, C
SEE FIGURE 13
= 160V
= 100V
= 40V
ds
SHORTED
30
100
40
A
A
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
100
0.1
0.1
10
10
1
1
0
1
T
T
Single Pulse
Fig. 8 - Maximum Safe Operating Area
C
J
= 25°C
= 150°C
OPERATION IN THIS AREA LIMITED
V
V
SD
DS
T = 150°C
J
0.4
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
10
BY R
0.8
T = 25°C
DS(on)
S10-2476-Rev. B, 01-Nov-10
J
Document Number: 90390
100
1.2
10μs
10ms
100ms
100μs
1ms
V
GS
= 0V
1000
1.6
A