IRL630S Vishay, IRL630S Datasheet - Page 5

• Manufacturer Part Number: IRL630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRL630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL630S

Document Number: 90390
S10-2476-Rev. B, 01-Nov-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
8
6
4
2
0
25
0.01
0.1
10
0.00001
1
D = 0.50
50
T , Case Temperature (°C)
C
0.20
0.10
0.05
0.02
0.01
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
SINGLE PULSE
0.0001
100
125
t , Rectangular Pulse Duration (sec)
0.001
1
150
A
0.01
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
0.1
5 V
V
GS
t
d(on)
V
J
IRL630S, SiHL630S
DS
t
r
D M
x Z
1
th J C
D.U.T.
2
P
1
D M
Vishay Siliconix
R
+ T
D
t
d(off)
C
t
1
t
2
t
f
+
-
www.vishay.com
V
DD
10
A A
5