IRL630S Vishay, IRL630S Datasheet - Page 3

• Manufacturer Part Number: IRL630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRL630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL630S

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 90390
S10-2476-Rev. B, 01-Nov-10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
100
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM 2.25V
TOP
BOTTOM 2.25V
V
V
DS
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
DS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
20μs PULSE WIDTH
T = 25°C
c
20μs PULSE WIDTH
T = 150°C
C
10
10
2.25V
2.25V
C
C
= 150 °C
= 25 °C
100
100
A
A
Fig. 4 - Normalized On-Resistance vs. Temperature
0.01
100
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
2.0
Fig. 3 - Typical Transfer Characteristics
I
T = 150°C
D
J
= 9.0A
T , Junction Temperature (°C)
T = 25°C
V
2.5
J
J
GS
, Gate-to-Source Voltage (V)
IRL630S, SiHL630S
0
3.0
20
40
3.5
60
Vishay Siliconix
V
20μs PULSE WIDTH
DS
80 100 120 140 160
= 50V
4.0
V
www.vishay.com
GS
4.5
= 5.0V
5.0
A
A
3