IRF610STRR Vishay, IRF610STRR Datasheet - Page 3

• Manufacturer Part Number: IRF610STRR
• Description: MOSFET N-CH 200V 3.3A D2PAK
• Manufacturer: Vishay

Specifications of IRF610STRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91024
S09-0071-Rev. A, 02-Feb-09
91024_01
91024_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
-1
0
-1
1
0
10
10
-1
Top
Bottom
-1
Top
Bottom
V
V
DS
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS ,
V
15 V
10 V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
, Drain-to-Source Voltage (V)
V
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
C
C
= 150 °C
= 25 °C
4.5 V
4.5 V
91024_03
91024_04
10
10
10
Fig. 4 - Normalized On-Resistance vs. Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
0
- 60 - 40 - 20 0
4
I
V
D
Fig. 3 - Typical Transfer Characteristics
GS
= 3.3 A
= 10 V
V
5
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
IRF610S, SiHF610S
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3