IRF610STRR Vishay, IRF610STRR Datasheet - Page 4

• Manufacturer Part Number: IRF610STRR
• Description: MOSFET N-CH 200V 3.3A D2PAK
• Manufacturer: Vishay

Specifications of IRF610STRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF610S, SiHF610S
Vishay Siliconix
www.vishay.com
4
91024_05
91024_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
300
250
200
150
100
50
20
16
12
0
8
4
0
10
0
0
I
D
= 3.3 A
V
DS ,
2
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
= 40 V
4
V
C
C
C
V
GS
iss
rss
oss
DS
= 0 V, f = 1 MHz
= C
= C
= C
= 100 V
C
C
C
10
gs
gd
ds
iss
oss
rss
6
1
+ C
V
+ C
DS
gd
gd
= 160 V
For test circuit
see figure 13
, C
ds
8
Shorted
10
91024_07
91024_08
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
10
-2
-1
1
0
2
5
2
5
2
5
2
5
2
1
0.4
0.1
Fig. 8 - Maximum Safe Operating Area
150
2
°
C
V
V
DS
SD
5
Operation in this area limited
0.8
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
1
25
2
°
C
T
T
Single Pulse
by R
C
J
5
= 150 °C
= 25 °C
1.2
10
DS(on)
2
S09-0071-Rev. A, 02-Feb-09
Document Number: 91024
5
1.6
10
2
V
2
GS
1
100
10
ms
= 0 V
ms
5
µs
10
2.0
3