IRFBC30ASTRR Vishay, IRFBC30ASTRR Datasheet - Page 4

• Manufacturer Part Number: IRFBC30ASTRR
• Description: MOSFET N-CH 600V 3.6A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC30ASTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10000
1000
100
10
20
16
12
1
8
4
0
0
1
I =
D
3.6A
V DS , Drain-to-Source Voltage (V)
4
Q , Total Gate Charge (nC)
G
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
8
V
V
V
DS
DS
DS
Coss
Crss
12
Ciss
= 480V
= 300V
= 120V
FOR TEST CIRCUIT
f = 1 MHZ
SEE FIGURE
100
16
SHORTED
20
13
1000
24
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
100
10
0.1
10
1
1
10
0.4
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
T = 150 C
V
DS
J
°
SD
°
0.6
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
100
°
BY R
0.8
DS(on)
T = 25 C
J
Document Number: 91109
S-81412-Rev. A, 07-Jul-08
10us
100us
1ms
10ms
1000
°
1.0
V
GS
= 0 V
10000
1.2