IRFBC30ASTRR Vishay, IRFBC30ASTRR Datasheet - Page 6

• Manufacturer Part Number: IRFBC30ASTRR
• Description: MOSFET N-CH 600V 3.6A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC30ASTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
400
300
200
100
0
25
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Starting T , Junction Temperature ( C)
Q
50
GS
J
Charge
Q
75
Q
GD
G
100
TOP
BOTTOM
125
°
1.6A
2.3A
3.6A
I D
150
740
720
700
680
660
640
Fig. 12d - Typical Drain-to-Source Voltage vs.
0.0
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Avalanache Current
I AV , Avalanche Current ( A)
1.0
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
2.0
Document Number: 91109
S-81412-Rev. A, 07-Jul-08
D.U.T.
I
D
3.0
+
-
V
DS
4.0