IRFBC30ASTRR Vishay, IRFBC30ASTRR Datasheet - Page 5

• Manufacturer Part Number: IRFBC30ASTRR
• Description: MOSFET N-CH 600V 3.6A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC30ASTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91109
S-81412-Rev. A, 07-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
4.0
3.0
2.0
1.0
0.0
Fig. 12a - Unclamped Inductive Test Circuit
25
R
0.01
20 V
0.1
G
10
0.00001
V
1
DS
D = 0.50
t
p
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
I
AS
D.U.T.
0.01 Ω
IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
15 V
Driver
125
°
+
- V
DD
A
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
J
V
DS
t
DM
r
x Z
t
1
0.1
p
thJC
P
2
D.U.T.
DM
+ T
Vishay Siliconix
R
D
C
t
t
1
d(off)
V
DS
t
2
t
f
+
-
www.vishay.com
V
DD
1
5