IRF530N,127 NXP Semiconductors, IRF530N,127 Datasheet

MOSFET N-CH 100V 17A TO-220AB

IRF530N,127

Manufacturer Part Number
IRF530N,127
Description
MOSFET N-CH 100V 17A TO-220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.IRF530N127.pdf (7 pages)

Specifications of IRF530N,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
633pF @ 25V
Power - Max
79W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1159-5
934055534127
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
GENERAL DESCRIPTION
N-channel
field-effect power transistor in a
plastic envelope using ’trench’
technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The IRF530N is supplied in the
SOT78 (TO220AB) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
V
V
V
I
I
P
T
SYMBOL PARAMETER
E
I
D
DM
AS
j
DSS
DGR
GS
D
AS
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Non-repetitive avalanche
energy
Peak non-repetitive
avalanche current
enhancement
mode
transistor
PINNING
SYMBOL
PIN
tab
1
2
3
CONDITIONS
T
T
T
T
T
T
CONDITIONS
Unclamped inductive load, I
t
V
to fig:14
p
j
j
mb
mb
mb
mb
DD
= 300 s; T
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C; V
= 100 ˚C; V
= 25 ˚C
= 25 ˚C
25 V; R
gate
drain
source
drain
g
DESCRIPTION
j
GS
prior to avalanche = 25˚C;
1
GS
GS
d
s
= 50 ; V
= 10 V
= 10 V
GS
= 20 k
GS
AS
= 10 V; refer
= 7.8 A;
QUICK REFERENCE DATA
SOT78 (TO220AB)
R
MIN.
MIN.
DS(ON)
- 55
V
-
-
-
-
-
-
-
-
-
drain
DSS
I
D
tab
Product specification
gate
= 17 A
= 100 V
1 2 3
drain
110 m
MAX.
MAX.
100
100
175
150
source
17
12
68
79
17
20
IRF530N
Rev 1.100
UNIT
UNIT
mJ
W
˚C
V
V
V
A
A
A
A

Related parts for IRF530N,127

Image
Part Number
Description
Manufacturer
Datasheet
Request R
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3152FET208
Part Number:
LPC3152FET208
Description:
The NXP LPC3152 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3154FET208
Part Number:
LPC3154FET208
Description:
The NXP LPC3154 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
BUK714R1-40BT
Part Number:
BUK714R1-40BT
Description:
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer:
NXP Semiconductors
Datasheet:
BUK714R1-40BT.pdf (13 pages)

IRF530N,127 Summary of contents

Page 1

Philips Semiconductors N-channel TrenchMOS FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters ...

Page 2

Philips Semiconductors N-channel TrenchMOS THERMAL RESISTANCES SYMBOL PARAMETER R Thermal resistance junction th j-mb to mounting base R Thermal resistance junction th j-a to ambient ELECTRICAL CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS ...

Page 3

Philips Semiconductors N-channel TrenchMOS Normalised Power Derating, PD (%) 100 100 Mounting Base temperature, Tmb (C) Fig.1. Normalised power dissipation. PD% = 100 ...

Page 4

Philips Semiconductors N-channel TrenchMOS Drain current, ID (A) 20 VDS > RDS(ON 175 Gate-source voltage, VGS ...

Page 5

Philips Semiconductors N-channel TrenchMOS Source-Drain Diode Current, IF (A) 20 VGS = 175 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Source-Drain Voltage, VSDS (V) Fig.13. Typical ...

Page 6

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 mm 4.1 1.27 0.7 Note 1. Terminals in this zone ...

Page 7

Philips Semiconductors N-channel TrenchMOS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...

Related keywords