BSP304A,126 NXP Semiconductors, BSP304A,126 Datasheet

MOSFET P-CH 300V 170MA SOT54

BSP304A,126

Manufacturer Part Number
BSP304A,126
Description
MOSFET P-CH 300V 170MA SOT54
Manufacturer
NXP Semiconductors
Datasheet
1.BSP304A126.pdf (9 pages)

Specifications of BSP304A,126

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 Ohm @ 170mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
170mA
Vgs(th) (max) @ Id
2.55V @ 1mA
Input Capacitance (ciss) @ Vds
90pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
934030880126
BSP304A AMO
BSP304A AMO
Philips Semiconductors
Product specification
File under Discrete Semiconductors, SC07
DATA SHEET
BSP304; BSP304A
P-channel enhancement mode
vertical D-MOS transistors
DISCRETE SEMICONDUCTORS
1995 Apr 07

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BSP304A,126 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 ...

Page 2

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors FEATURES Direct interface to C-MOS, TTL etc. High speed switching No secondary breakdown. APPLICATIONS Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed ...

Page 3

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage (DC gate-source voltage (DC) GSO I drain current (DC peak drain ...

Page 4

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors handbook, halfpage Fig.2 Switching time test circuit. 1.2 handbook, halfpage P tot (W) 0.8 0 100 Fig.4 Power derating curve. 1995 Apr ...

Page 5

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors 100 handbook, halfpage C (pF MHz. Fig.6 Capacitance as a function of drain ...

Page 6

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors 60 handbook, halfpage R DSon Fig.10 Drain-source on-state resistance as a function ...

Page 7

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors 3 10 handbook, full pagewidth R th j-a (K/ 0.75 0.5 0.2 0.1 10 0.05 0.02 0. ...

Page 8

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors PACKAGE OUTLINE handbook, full pagewidth 4.2 max 1.6 1 4.8 2.54 max 3 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal ...

Page 9

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product ...

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