BUK7624-55A,118 NXP Semiconductors, BUK7624-55A,118 Datasheet - Page 7

• Manufacturer Part Number: BUK7624-55A,118
• Description: MOSFET N-CH 55V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7624-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934056286118; BUK7624-55A /T3; BUK7624-55A /T3

Philips Semiconductors
9397 750 08029
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(V)
(S)
25
20
15
10
5
0
4.5
3.5
2.5
1.5
0.5
0
5
4
3
2
1
0
-60
DS
DS
= V
= 25 V
-20
GS
20
20
40
60
max.
typ.
min
100
60
T j ( o C)
I D (A)
140
03nb68
03aa32
80
Rev. 02 — 01 March 2001
180
BUK7524-55A; BUK7624-55A
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C (pF)
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
(A)
I D
2000
1800
1600
1400
1200
1000
800
600
400
200
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
0
10 -2
0
DS
= V
TrenchMOS™ standard level FET
GS
10 -1
1
2
min
1
© Philips Electronics N.V. 2001. All rights reserved.
3
typ
10
V GS (V)
V DS (V)
4
03nb73
max
03aa35
10 2
Ciss
Coss
Crss
5
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