IRFP150N International Rectifier, IRFP150N Datasheet - Page 5

• Manufacturer Part Number: IRFP150N
• Description: MOSFET N-CH 100V 42A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP150N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP150N

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0.01
0.1
10
0.00001
Fig 9. Maximum Drain Current Vs.
1
50
40
30
20
10
0
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Case Temperature
50
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
t , Rectangular Pulse Duration (sec)
1
°
150
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
1. Duty factor D = t / t
2. Peak T = P
R
d(on)
Notes:
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
G
10V
V
GS
t
r
J
V
DS
DM
x Z
1
0.1
thJC
P
2
DM
D.U.T.
+ T
t
d(off)
IRFP150N
C
t
R
1
D
t
2
t
f
+
-
V
1
DD
5