IRFP150N International Rectifier, IRFP150N Datasheet - Page 7

• Manufacturer Part Number: IRFP150N
• Description: MOSFET N-CH 100V 42A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP150N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP150N

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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Fig 14. For N-Channel HEXFETS
Period
Body Diode Forward
+
-
· dv/dt controlled by R
· Driver same type as D.U.T.
· I
· D.U.T. - Device Under Test
Diode Recovery
SD
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
di/dt
Current Transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
IRFP150N
7