IRF7809AV International Rectifier, IRF7809AV Datasheet - Page 2

• Manufacturer Part Number: IRF7809AV
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7809AV

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7809AV

IRF7809AV
Electrical Characteristics
Source-Drain Rating & Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
Current*
Gate-Source Leakage
Current*
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance C
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge„
Reverse Recovery
Charge (with Parallel
Schottky)„
2
Notes:

‚
ƒ
„
…
gs2
Typical values measured at V
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
+ Q
gd
)
BV
V
V
R
I
I
Q
Q
Q
Q
Q
Q
Q
R
t
t
t
t
C
C
Q
Q
DSS
GSS
d (on)
r
d (off)
f
GS(th)
SD
DS
G
G
GS1
GS2
GD
sw
G
iss
oss
rss
rr
oss
rr(s)
oss
DSS
(on)
Min
Min
1.0
30
–
–
–
GS
= 4.5V, I
3780
1060
Typ
Typ
130
120
150
7.0
7.0
2.3
1.5
41
36
12
14
30
14
36
96
10
–
F
= 15A.
±100
Max
Max
150
9.0
3.0
1.3
30
62
54
21
45
–
–
–
–
Units
Units
m
µA
nA
nC
pF
nC
nC
ns
Ω
V
V
V
Ω
V
V
V
V
V
V
V
V
I
V
V
Clamped Inductive Load
V
I
di/dt ~ 700A/µs
V
di/dt = 700A/µs
(with 10BQ040)
V
D
S
Conditions
Conditions
V
GS
GS
DS
DS
DS
Tj = 100°C
GS
GS
DS
=15A, V
DS
DD
DS
DS
DS
= 15A‚, V
V
GS
=5V, I
= 0V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 5V, V
= 20V, I
= 16V, V
= 16V, I
= 16V, V
= 16V, V
= 16V, V
GS
= ±12V
= 5V
GS
,I
DS
D
D
D
=15A, V
DS
=16V
D
D
= 250µA
= 250µA
D
GS
GS
GS
GS
GS
GS
GS
< 100mV
= 15A
= 15A
= 15A‚
= 0
= 0,
= 0
= 0V, I
= 0V, I
= 0
= 0V
DS
=20V
S
S
= 15A
= 15A
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