IRF7809AV International Rectifier, IRF7809AV Datasheet - Page 4

• Manufacturer Part Number: IRF7809AV
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7809AV

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7809AV

IRF7809AV
1000
4
100
0.1
10
6000
5000
4000
3000
2000
1000
1
0.2
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
V
T = 150 C
SD
0.6
J
V
DS
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
°
GS
iss
rss
oss
T = 25 C
1.0
J
=
=
=
=
0V,
C
C
C
gs
gd
ds
°
C oss
C rss
+ C
+ C
C iss
10
1.4
f = 1MHz
gd ,
gd
C
ds
V
1.8
GS
SHORTED
= 0 V
2.2
100
1000
10
100
8
6
4
2
0
10
Fig 8. Maximum Safe Operating Area
1
0
0.1
I =
D
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
A
J
15A
= 25 C
= 150 C
10
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
Q , Total Gate Charge (nC)
DS
°
G
°
20
, Drain-to-Source Voltage (V)
1
30
BY R
V
DS
DS(on)
= 20V
40
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10
50
60
10us
100us
1ms
10ms
70
100