IRF7809AV International Rectifier, IRF7809AV Datasheet - Page 6

• Manufacturer Part Number: IRF7809AV
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7809AV

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7809AV

IRF7809AV
I
AS
12V
Fig 14a&b. Unclamped Inductive Test circuit
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
6
0.008
0.007
0.006
0.005
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
Current Sampling Resistors
0
.3µF
I
G
V
V GS = 4.5V
(BR)DSS
D.U.T.
20
I
D
and Waveforms
and Waveform
+
-
I D , Drain Current (A)
V
DS
40
V
V GS = 10V
GS
R G
20V
V DS
60
V
t p
G
Q
I AS
GS
D.U.T
0.01 Ω
L
80
Q
Charge
Q
GD
G
100
15V
DRIVER
120
+
-
V DD
A
Fig 13. On-Resistance Vs. Gate Voltage
500
400
300
200
100
0.012
0.010
0.008
0.006
0
Fig 14c. Maximum Avalanche Energy
25
2.5
Starting T , Junction Temperature( C)
50
V GS, Gate -to -Source Voltage (V)
Vs. Drain Current
3.0
J
75
3.5
100
I D = 15A
TOP
BOTTOM
www.irf.com
4.0
125
°
6.7A
9.5A
I D
15A
150
4.5