IRF7809AV International Rectifier, IRF7809AV Datasheet - Page 7

• Manufacturer Part Number: IRF7809AV
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7809AV

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7809AV

SO-8 Part Marking
SO-8 Package Details
www.irf.com
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
NOT ES :
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIMETER
3. DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
7 DIMENSION IS THE LENGTH OF LEAD FOR S OLDERING T O
LOGO
E
A
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
A SUBST RATE.
6
6X
0.25 [.010]
e
8
1
7
2
8X b
D
6
3
C A B
5
5
4
e1
A1
B
F7101
0.25 [.010]
A
XXXX
H
C
0.10 [.004]
A
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
WW = WEEK
A = AS S EMBLY S IT E CODE
PART NUMBER
Y = LAS T DIGIT OF THE YEAR
LOT CODE
y
PRODUCT (OPTIONAL)
3X 1.27 [.050]
8X L
7
6.46 [.255]
DIM
K x 45°
e 1
e
A
A1
b
c
D
E
H
K
L
y
IRF7809AV
.0532
.0040
.013
.0075
.189
.1497
.050 BAS IC
.025 BAS IC
.2284
.0099
.016
MIN
0°
INCHES
8X c
.0688
.0098
.020
.0098
.1968
.1574
.2440
.0196
.050
MAX
8°
FOOTPRINT
8X 0.72 [.028]
1.35
0.10
0.33
0.19
4.80
3.80
1.27 BAS IC
0.635 BAS IC
5.80
0.25
0.40
MILLIMETERS
MIN
0°
1.75
0.25
0.51
0.25
5.00
4.00
6.20
0.50
1.27
8X 1.78 [.070]
MAX
8°
7