IRF7809AV International Rectifier, IRF7809AV Datasheet - Page 3

• Manufacturer Part Number: IRF7809AV
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7809AV

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7809AV

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1000
1000
100
100
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
2.4
0.1
TOP
BOTTOM
V
T = 150 C
V
DS
J
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
2.6
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
°
1
2.8
2.5V
°
V
20µs PULSE WIDTH
3.0
20µs PULSE WIDTH
T = 25 C
DS
J
10
= 15V
°
3.2
3.4
100
1000
100
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20
TOP
BOTTOM
I =
D
V
15A
DS
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
T , Junction Temperature( C)
Vs. Temperature
, Drain-to-Source Voltage (V)
J
0
1
20 40 60 80 100 120 140 160
IRF7809AV
2.5V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
10V
3
100