IRF7805ATR International Rectifier, IRF7805ATR Datasheet
IRF7805ATR
Specifications of IRF7805ATR
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IRF7805ATR Summary of contents
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N Channel Application Specific MOSFETs • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. ...
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IRF7805 Static @ T = 25°C (unless otherwise specified) J Parameter Drain-to-Source Breakdown Voltage BV DSS Static Drain-to-Source On-Resistance R DS(on) Gate Threshold Voltage V GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Total ...
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Fig 1. Normalized On-Resistance vs. Temperature Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 0.01 Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com ...
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IRF7805 SO-8 Package Details Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENSIONING & ...
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SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD ...