IRFR9N20DTR International Rectifier, IRFR9N20DTR Datasheet

MOSFET N-CH 200V 9.4A DPAK

IRFR9N20DTR

Manufacturer Part Number
IRFR9N20DTR
Description
MOSFET N-CH 200V 9.4A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR9N20DTR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
560pF @ 25V
Power - Max
86W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9N20DTRLPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFR9N20DTRPBF
Quantity:
5 000
Company:
Part Number:
IRFR9N20DTRPBF
Quantity:
24 000
Company:
Part Number:
IRFR9N20DTRPBF
Quantity:
24 000
Typical SMPS Topologies
www.irf.com
Applications
Absolute Maximum Ratings
Benefits
I
I
I
P
V
dv/dt
T
T
Notes
D
D
DM
STG
D
GS
J
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Telecom 48V input Forward Converter
Switching Losses
C
C
C
= 25°C
= 100°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Power Dissipation
to Simplify Design, (See
are on page 10
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
200V
DSS
300 (1.6mm from case )
IRFR9N20D
HEXFET
D-Pak
-55 to + 175
R
Max.
0.57
± 30
9.4
6.7
5.0
DS(on)
38
86
0.38
®
Power MOSFET
IRFU9N20D
max
IRFR9N20D
IRFU9N20D
I-Pak
PD - 93919A
Units
W/°C
9.4A
V/ns
°C
W
I
A
V
D
1
6/29/00

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IRFR9N20DTR Summary of contents

Page 1

Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter ...

Page 2

IRFR9N20D/IRFU9N20D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5. 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ° ...

Page 4

IRFR9N20D/IRFU9N20D 10000 0V, C iss = rss = oss = 1000 Ciss 100 Coss Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

IRFR9N20D/IRFU9N20D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFR9N20D/IRFU9N20D ...

Page 8

IRFR9N20D/IRFU9N20D D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...

Page 9

I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 10

IRFR9N20D/IRFU9N20D D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches 12 11 LLIN G ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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