IRFR9N20DTR International Rectifier, IRFR9N20DTR Datasheet - Page 11

• Manufacturer Part Number: IRFR9N20DTR
• Description: MOSFET N-CH 200V 9.4A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR9N20DTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 25V
• Power - Max: 86W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/