IRFR9N20DTR International Rectifier, IRFR9N20DTR Datasheet - Page 6

• Manufacturer Part Number: IRFR9N20DTR
• Description: MOSFET N-CH 200V 9.4A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR9N20DTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 25V
• Power - Max: 86W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFR9N20D/IRFU9N20D
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
A S
V
G
R G
2 0 V
V D S
Q
GS
t p
t p
I A S
D .U .T
Q
Charge
0 .0 1
L
Q
GD
G
V
(B R )D SS
1 5 V
D R IV E R
+
-
V D D
A
200
160
120
80
40
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
50
12V
V
GS
Same Type as D.U.T.
Vs. Drain Current
Current Regulator
J
.2 F
75
50K
3mA
Current Sampling Resistors
.3 F
100
I
G
125
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
150
+
-
V
DS
°
2.3A
4.0A
5.6A
I D
175