IRFR9N20DTR International Rectifier, IRFR9N20DTR Datasheet - Page 2

• Manufacturer Part Number: IRFR9N20DTR
• Description: MOSFET N-CH 200V 9.4A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR9N20DTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 25V
• Power - Max: 86W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Diode Characteristics
IRFR9N20D/IRFU9N20D
Avalanche Characteristics
Thermal Resistance
Dynamic @ T
Static @ T
E
I
E
R
R
R
R
I
I
I
V
t
Q
t
V
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
AR
SM
DSS
S
rr
on
GSS
d(on)
r
d(off)
f
2
V
AS
AR
fs
DS(on)
SD
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
JC
JA
JA
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
4.3
Min. Typ. Max. Units
3.0
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.23
–––
–––
–––
–––
–––
560
670
–––
–––
–––
130
560
––– 0.38
–––
––– -100
4.7
9.0
7.5
9.3
18
74
16
13
97
29
40
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
5.5
7.1
9.4
27
14
25
38
V/°C
nC
nC
µA
nA
ns
pF
ns
A
V
V
V
S
Typ.
Typ.
–––
–––
–––
–––
–––
–––
I
D
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
Reference to 25°C, I
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
= 5.6A
G
= 5.6A
= 25°C, I
= 25°C, I
= 11
= V
= 200V, V
= 160V, V
= 50V, I
= 160V
= 10V,
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= 0V, I
= 10V, I
= 30V
= -30V
= 100V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
Conditions
Conditions
= 5.6A, V
= 5.6A
= 5.6A
= 250µA
= 5.6A
GS
GS
= 0V to 160V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
1.75
100
110
5.6
8.6
50
= 0V
= 0V, T
www.irf.com
D
= 1mA
GS
J
G
= 0V
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
S
D
)