STP3NB100 STMicroelectronics, STP3NB100 Datasheet

MOSFET N-CH 1KV 3A TO-220

STP3NB100

Manufacturer Part Number
STP3NB100
Description
MOSFET N-CH 1KV 3A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STP3NB100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2641-5

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STP3NB100
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ST
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Part Number:
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ST
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STP3NB100F
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ST
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Manufacturer:
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1)I
August 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP3NB100
STP3NB100FP
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT
SD
Symbol
dv/dt
I
V
P
DM
V
V
V
T
DGR
I
I
TOT
T
ISO
3A, di/dt 200A/µs, V
GS
stg
DS
D
D
TYPE
j
( )
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 5.3
1000 V
1000 V
N-CHANNEL 1000V - 5.3 - 3A TO-220/TO-220FP
V
DD
DSS
V
(BR)DSS
R
< 6
< 6
DS(on)
C
, T
GS
Parameter
= 25°C
j
GS
= 20 k )
DS(on)
T
= 0)
JMAX.
C
C
= 25°C
= 100°C
per area,
3 A
3 A
I
D
(*)Limited only by maximum temperature allowed
INTERNAL SCHEMATIC DIAGRAM
TO-220
PowerMesh™ MOSFET
STP3NB100
100
1.9
0.8
4.5
12
3
-
1
STP3NB100FP
2
–65 to 150
3
Value
1000
1000
±30
150
STP3NB100
STP3NB100FP
PRELIMINARY DATA
TO-220FP
1.9 (*)
2500
0.28
3 (*)
4.5
12
35
1
2
W/°C
Unit
V/ns
3
°C
°C
W
V
V
V
A
A
A
V
1/7

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STP3NB100 Summary of contents

Page 1

... DS(on) Parameter = 25° 100° 25°C C (*)Limited only by maximum temperature allowed , JMAX. STP3NB100 STP3NB100FP PowerMesh™ MOSFET PRELIMINARY DATA TO-220FP TO-220 Value STP3NB100 STP3NB100FP 1000 1000 ± (*) 1.9 1.9 (*) 12 12 100 35 0.8 0.28 4.5 4.5 - 2500 –65 to 150 150 Unit ...

Page 2

... STP3NB100/FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... Figure 800V 10V GS Test Conditions V = 800V 4 10V G GS (see test circuit, Figure 5) Test Conditions Min di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) STP3NB100/FP Typ. Max. Unit 10.5 nC Min. Typ. Max. Unit Typ. Max. Unit 1.6 V 580 ns 2.9 µC ...

Page 4

... STP3NB100/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... STP3NB100/FP inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C ...

Page 6

... STP3NB100/FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 6/7 TO-220FP MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10 ...

Page 7

... The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. STMicroelectronics GROUP OF COMPANIES http://www.st.com STP3NB100/FP 7/7 ...

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