STW60NE10 STMicroelectronics, STW60NE10 Datasheet
STW60NE10
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STW60NE10 Summary of contents
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... T Max. Operating Junction Temperature Pulse width limited by safe operating area June 1999 STripFET I DS(on "Single Feature avalanche manufacturing INTERNAL SCHEMATIC DIAGRAM Parameter = 100 di/ STW60NE10 POWER MOSFET TO-247 Value Unit 100 V 100 240 A 180 V/ns o -65 to 175 C o 175 C 200 ...
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... STW60NE10 THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...
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... Load, see fig clamp (Inductive Load, see fig. 5) Test Conditions di/dt = 100 150 DD j (see test circuit, fig. 5) Thermal Impedance STW60NE10 Min. Typ. Max. 28 100 142 185 27 59 Min. Typ. Max. 160 Min. Typ. Max. 60 240 1.5 170 o C 1.02 12 Unit ...
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... STW60NE10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STW60NE10 5/8 ...
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... STW60NE10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... TYP. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 0.429 15.9 0.602 20.3 0.776 14.8 0.559 0.413 1.362 0.217 3 0.079 3.65 0.140 STW60NE10 MAX. 0.209 0.102 0.031 0.055 0.094 0.134 0.626 0.779 0.582 0.118 0.144 P025P 7/8 ...
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... STW60NE10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...