STP50NE10 STMicroelectronics, STP50NE10 Datasheet
STP50NE10
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STP50NE10 Summary of contents
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... Applications ■ Switching application Order codes Part number STP50NE10 August 2006 N-channel 100V - 0.021Ω - 50A TO-220 STripFET™ Power MOSFET R I DS(on) D <0.027Ω 50A Internal schematic diagram Marking P50NE10 Rev 8 STP50NE10 TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP50NE10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
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... STP50NE10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope T Operating junction temperature ...
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... Parameter Test condictions V > ID(on) x RDS(on)max 25A D V =25V, f=1 MHz 50V 4.7Ω (see Figure 12) V =80V =10V GS STP50NE10 Min. Typ. Max 100 GS 10 100 ± = 250µ 25A 0.021 0.027 Min. Typ. Max 4350 6000 =0 5000 675 GS 175 238 ...
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... STP50NE10 Table 6. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test condictions ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STP50NE10 ...
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... STP50NE10 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...
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... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform STP50NE10 ...
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... STP50NE10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STP50NE10 inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 0.048 0.052 ...
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... STP50NE10 5 Revision history Table 7. Revision history Date 09-Sep-2004 10-Aug-2006 Revision 7 Complete version 8 New template, no content change Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP50NE10 ...