MOSFET N-CH 60V 36A TO-220

STP36NE06

Manufacturer Part NumberSTP36NE06
DescriptionMOSFET N-CH 60V 36A TO-220
ManufacturerSTMicroelectronics
SeriesSTripFET™
STP36NE06 datasheet
 


Specifications of STP36NE06

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs40 mOhm @ 18A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C36AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs70nC @ 10VInput Capacitance (ciss) @ Vds2800pF @ 25V
Power - Max100WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names497-2763-5  
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N - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FP
TYPE
V
R
DSS
STP36NE06
60 V
< 0.040
STP36NE06FP
60 V
< 0.040
TYPICAL R
= 0.032
DS(on)
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
o
LOW GATE CHARGE 100
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
Drain-source Voltage (V
DS
V
Drain- gate Voltage (R
DGR
V
Gate-source Voltage
GS
I
Drain Current (continuous) at T
D
I
Drain Current (continuous) at T
D
I
( )
Drain Current (pulsed)
DM
P
Total Dissipation at T
tot
Derating Factor
V
Insulation Withstand Voltage (DC)
ISO
dv/dt
Peak Diode Recovery voltage slope
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
July 1998
STripFET
I
DS(on)
D
36 A
20 A
C
"
INTERNAL SCHEMATIC DIAGRAM
Parameter
= 0)
GS
= 20 k )
GS
o
= 25
C
c
o
= 100
C
c
o
= 25
C
c
(
) I
1
SD
STP36NE06
STP36NE06FP
POWER MOSFET
3
2
1
TO-220
TO-220FP
Value
STP36NE06
STP36NE06FP
60
60
20
36
20
24
14
144
144
100
35
0.66
0.27
2000
7
-65 to 175
175
36 A, di/dt
300 A/ s, V
V
, T
DD
(BR)DSS
j
3
2
1
Unit
V
V
V
A
A
A
W
o
W/
C
V
V/ns
o
C
o
C
T
JMAX
1/9

STP36NE06 Summary of contents

  • Page 1

    ... Pulse width limited by safe operating area July 1998 STripFET I DS(on " INTERNAL SCHEMATIC DIAGRAM Parameter = 100 STP36NE06 STP36NE06FP POWER MOSFET TO-220 TO-220FP Value STP36NE06 STP36NE06FP 144 144 100 35 0.66 0.27 2000 7 -65 to 175 175 36 A, di/dt 300 (BR)DSS Unit V/ns ...

  • Page 2

    ... STP36NE06FP THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...

  • Page 3

    ... Safe Operating Area for TO-220 Test Conditions =4 4 Test Conditions =4 Test Conditions di/dt = 100 150 Safe Operating Area for TO-220FP STP36NE06FP Min. Typ. Max. Unit 115 ns 250 Min. Typ. Max. Unit Min. Typ. Max. Unit 36 A 144 A 1 245 C 6.5 A 3/9 ...

  • Page 4

    ... STP36NE06FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

  • Page 5

    ... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP36NE06FP 5/9 ...

  • Page 6

    ... STP36NE06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

  • Page 7

    ... STP36NE06FP inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 ...

  • Page 8

    ... STP36NE06FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 TO-220FP MECHANICAL DATA mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 16 30.6 10.6 16.4 9.3 3 inch MIN. TYP. MAX. 0.173 ...

  • Page 9

    ... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES . STP36NE06FP 9/9 ...