STB16NK65Z-S STMicroelectronics, STB16NK65Z-S Datasheet

MOSFET N-CH 650V 13A I2SPAK

STB16NK65Z-S

Manufacturer Part Number
STB16NK65Z-S
Description
MOSFET N-CH 650V 13A I2SPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STB16NK65Z-S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
89nC @ 10V
Input Capacitance (ciss) @ Vds
2750pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4098-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB16NK65Z-S
Manufacturer:
ST
Quantity:
12 500
September 2005
Table 1: General Features
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capabil-
ity for the most demanding applications. Such se-
ries complements ST full range of high voltage
MOSFETs including revolutionary MDmesh™
products.
APPLICATIONS
Table 2: Order Codes
STP16NK65Z
STB16NK65Z-S
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
IDEAL FOR OFF-LINE POWER SUPPLIES
HIGH CURRENT, HIGH SPEED SWITCHING
TYPE
STB16NK65Z-S
SALES TYPE
STP16NK65Z
DS
(on) = 0.38
650 V
650 V
V
DSS
N-CHANNEL 650V - 0.38 - 13A TO-220 / I
R
< 0.50
< 0.50
DS(on)
P16NK65Z
B16NK65Z
MARKING
Zener - Protected SuperMESH™ MOSFET
13 A
13 A
I
D
190 W
190 W
Pw
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
TO-220
I²SPAK
TO-220
STB16NK65Z-S
1
2
STP16NK65Z
3
PACKAGING
TUBE
TUBE
I²SPAK
2
1 2
SPAK
3
Rev. 3
1/12

Related parts for STB16NK65Z-S

STB16NK65Z-S Summary of contents

Page 1

... IDEAL FOR OFF-LINE POWER SUPPLIES Table 2: Order Codes SALES TYPE STP16NK65Z STB16NK65Z-S September 2005 Zener - Protected SuperMESH™ MOSFET Figure 1: Package 190 190 W Figure 2: Internal Schematic Diagram MARKING PACKAGE P16NK65Z TO-220 B16NK65Z I²SPAK STP16NK65Z STB16NK65Z I²SPAK TO-220 PACKAGING TUBE TUBE SPAK Rev. 3 1/12 ...

Page 2

... STP16NK65Z - STB16NK65Z-S Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous (*) Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source EDS (HBM-C=100pF, R=1.5k ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... (see Figure 20) Test Conditions di/dt = 100 A/µ 100 25° (see Figure 18 di/dt = 100 A/µ 100 150° (see Figure 18) STP16NK65Z - STB16NK65Z-S Min. Typ. Max. 650 50 = 125 °C ±10 4.5 3 3.75 0.38 0.50 Min. Typ. Max 2750 GS 275 60 188 Min. Typ. ...

Page 4

... STP16NK65Z - STB16NK65Z-S Figure 3: Safe Operating Area Figure 4: Output Characteristics Figure 5: Transconductance 4/12 Figure 6: Thermal Impedance Figure 7: Transfer Characteristics Figure 8: Static Drain-source On Resistance ...

Page 5

... Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Normalized Gate Thereshold Volt- age vs Temperature Figure 11: Dource-Drain Diode Forward Char- acteristics STP16NK65Z - STB16NK65Z-S Figure 12: Capacitance Variations Figure 13: Normalized On Resistance vs Tem- perature Figure 14: Normalized BVdss vs Temperature 5/12 ...

Page 6

... STP16NK65Z - STB16NK65Z-S Figure 15: Avalanche Energy vs Starting Tj j 6/12 ...

Page 7

... Figure 16: Unclamped Inductive Load Test Cir- cuit Figure 17: Switching Times Test Circuit For Resistive Load Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times STP16NK65Z - STB16NK65Z-S Figure 19: Unclamped Inductive Wafeform Figure 20: Gate Charge Test Circuit 7/12 ...

Page 8

... STP16NK65Z - STB16NK65Z-S In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark ...

Page 9

... MIN. TYP A 4.40 A1 2.49 B 0.70 B2 1.14 C 0.45 C2 1.23 D 8.95 E 10.00 G 4.88 L 16.7 L2 1.27 L3 13.82 STP16NK65Z - STB16NK65Z-S inch MAX. MIN. TYP. 4.60 0.173 2.69 0.098 0.93 0.027 1.70 0.045 0.60 0.018 1.36 0.048 9.35 0.352 10.40 0.394 5.28 0.192 17.5 0.657 1.4 ...

Page 10

... STP16NK65Z - STB16NK65Z-S DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q 2.65 10/12 TO-220 MECHANICAL DATA mm. TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2 ...

Page 11

... Table 10: Revision History Date Revision 06-Aug-2004 1 02-Sep-2004 2 06-Sep-2005 3 STP16NK65Z - STB16NK65Z-S Description of Changes First Release. Complete Version Inserted Ecopack indication 11/12 ...

Page 12

... STP16NK65Z - STB16NK65Z-S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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