IRF7811APBF International Rectifier, IRF7811APBF Datasheet
IRF7811APBF
Specifications of IRF7811APBF
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IRF7811APBF Summary of contents
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... Junction-to-Ambient R θJA Notes through … are on page 10 www.irf.com V DSS 28V Top View @ 10V GS @ 10V 300 (1.6mm from case) Typ g ––– fg ––– IRF7811APbF HEXFET Power MOSFET R max Q DS(on) 12mΩ 17nC SO-8 Max Units 9 2.5 W 1.6 0.02 W/° ...
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... IRF7811APbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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... Fig 3. Typical Transfer Characteristics www.irf.com 100 10 1 0.1 0.1 10 100 Fig 2. Typical Output Characteristics 2 11A 10V 1.5 1.0 0.5 3.0 3.4 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7811APbF 1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 100 120 140 160 Junction Temperature (°C) Vs. Temperature 100 3 ...
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... IRF7811APbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100.0 10 150° 25°C 1.0 0.1 0.2 0.4 0.6 0 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 9.0A SHORTED 100 Fig 6. Typical Gate Charge Vs. ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7811APbF + - ≤ 1 ≤ 0 d(off thJA A ...
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... IRF7811APbF 0.013 0.011 0.009 0.007 0.005 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I G Current Sampling Resistors Fig 14. Basic Gate Charge Test Circuit V (BR)DSS 20V Fig 15a&b. Unclamped Inductive Test circuit ...
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... SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs Qgd Qgodr Fig 16. Gate Charge Waveform IRF7811APbF P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ for N-Channel Id Vgs ...
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... IRF7811APbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching This can be expanded and approximated by × loss rms ds(on ) ⎛ ⎛ ⎞ Q ⎜ ⎟ × ⎜ × × V × ⎝ ⎠ ⎝ × V × ⎛ Q ⎞ + × V × f oss ⎝ ...
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... IRF7811APbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: ...