STB50NE10T4 STMicroelectronics, STB50NE10T4 Datasheet

MOSFET N-CH 100V 50A D2PAK

STB50NE10T4

Manufacturer Part Number
STB50NE10T4
Description
MOSFET N-CH 100V 50A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB50NE10T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
166nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
180W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB50NE10T4
Manufacturer:
ST
0
Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
June 2006
STB50NE10
Exceptional dv/dt capability
100% avalanche tested
Low gate charge at 100 °C
Application oriented characterization
Switching application
Type
STB50NE10T4
Part number
V
100V
DSS
<0.027Ω
R
DS(on)
B50NE10
Marking
N-channel 100V - 0.021Ω - 50A - D
50A
I
D
Rev 5
Internal schematic diagram
STripFET™ Power MOSFET
Package
D
2
PAK
D
2
PAK
STB50NE10
1
3
Tape & reel
Packaging
www.st.com
2
PAK
1/13
13

Related parts for STB50NE10T4

STB50NE10T4 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STB50NE10T4 June 2006 N-channel 100V - 0.021Ω - 50A - D STripFET™ Power MOSFET R I DS(on) D <0.027Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB50NE10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STB50NE10 Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STB50NE10 ...

Page 7

STB50NE10 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/13 ...

Page 8

Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/13 Figure 13. Gate charge test circuit Figure 15. ...

Page 9

STB50NE10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

Page 10

Package mechanical data DIM 10/ PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 ...

Page 11

STB50NE10 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 ...

Page 12

Revision history 6 Revision history Table 7. Revision history Date 21-Jun-2004 26-Jun-2006 12/13 Revision 4 Complete version 5 New template, no content change STB50NE10 Changes ...

Page 13

... STB50NE10 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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