STP60NE06L-16 STMicroelectronics, STP60NE06L-16 Datasheet

MOSFET N-CH 60V 60A TO-220

STP60NE06L-16

Manufacturer Part Number
STP60NE06L-16
Description
MOSFET N-CH 60V 60A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP60NE06L-16

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 5V
Input Capacitance (ciss) @ Vds
4150pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP60NE06L-16
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP60NE06L-16
Manufacturer:
ST
0
Part Number:
STP60NE06L-16������
Manufacturer:
ST
0
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size "
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
May 2000
STP60NE06L-16
STP60NE06L-16FP
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
LOW THRESHOLD DRIVE
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
I
V
dv/dt
DM
V
V
V
P
T
DGR
I
I
T
ISO
stg
DS
GS
D
D
tot
( )
j
N - CHANNEL 60V - 0.014
o
TYPE
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
= 0.014
V
60 V
60 V
DSS
Parameter
< 0.016
< 0.016
R
c
GS
DS(on)
= 25
GS
= 20 k )
= 0)
o
C
c
c
= 25
= 100
60 A
35 A
I
D
o
C
o
STripFET
C
(
1
) I
STP60NE06L-16
SD
- 60A TO-220/TO-220FP
INTERNAL SCHEMATIC DIAGRAM
60 A, di/dt
240
150
STP60NE06L-16FP
60
42
TO-220
1
STP60NE06L-16
300 A/ s, V
-65 to 175
POWER MOSFET
1
Value
175
2
60
60
6
15
STP60NE06L-16FP
3
DD
V
2000
(BR)DSS
140
0.3
35
24
45
TO-220FP
, T
j
T
JMAX
1
W/
V/ns
Unit
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

Related parts for STP60NE06L-16

STP60NE06L-16 Summary of contents

Page 1

... Max. Operating Junction Temperature Pulse width limited by safe operating area May 2000 - 60A TO-220/TO-220FP STripFET R I DS(on INTERNAL SCHEMATIC DIAGRAM STP60NE06L- 100 di/ STP60NE06L-16 STP60NE06L-16FP POWER MOSFET TO-220 TO-220FP Value STP60NE06L-16FP 240 140 150 45 1 0.3 2000 6 -65 to 175 175 300 (BR)DSS j JMAX 3 2 ...

Page 2

... STP60NE06L-16/FP THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...

Page 3

... GS (Resistive Load, see fig 4 (Inductive Load, see fig. 5) Test Conditions di/dt = 100 150 (see test circuit, fig. 5) Safe Operating Area for TO-220FP STP60NE06L-16/FP Min. Typ. Max. Unit 50 ns 155 Min. Typ. Max. Unit 125 220 ns 280 ns Min. Typ. Max. Unit 60 A 240 A 1 ...

Page 4

... STP60NE06L-16/FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP60NE06L-16/FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STP60NE06L-16/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STP60NE06L-16/FP inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 ...

Page 8

... STP60NE06L-16/FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 TO-220FP MECHANICAL DATA mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 16 30.6 10.6 16.4 9.3 3 inch MIN. TYP. MAX. 0.173 ...

Page 9

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com STP60NE06L-16/FP 9/9 ...

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