STW13NK80Z STMicroelectronics, STW13NK80Z Datasheet - Page 5

• Manufacturer Part Number: STW13NK80Z
• Description: MOSFET N-CH 800V 12A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW13NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 3480pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STW13NK80Z
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C
C
V
Symbol
Symbol
CASE
R
V
oss eq
(BR)DSS
g
increases from 0 to 80% V
t
t
I
I
C
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
rss
iss
gd
r
gs
f
g
(1)
=25°C unless otherwise specified)
(2)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
.
= 0)
I
V
V
T
V
V
V
V
V
V
V
to 720V
V
R
(see
V
V
(see
D
C
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
DD
G
= 1mA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= max rating
= max rating,
= ± 20V
= V
= 10V, I
= 15V
= 25V, f = 1MHz,
= 0
= 0V, V
= 10V, R
= 400V, I
= 640V, I
Figure
Figure
GS
,
, I
I
GS
DS
D
13)
14)
D
GS
D
G
D
D
= 6A
= 6A
= 100µA
=0
= 0V
= 4.7Ω
= 6A
= 10V
= 12A,
Min.
Min.
800
3
Electrical characteristics
3480
Typ.
Typ.
3.75
0.53
312
150
115
11
67
33
22
95
55
31
51
oss
Max.
Max.
0.65
155
±10
4.5
50
1
when V
Unit
Unit
DS
nC
nC
nC
pF
pF
pF
pF
µA
µA
ns
ns
ns
ns
µA
S
V
V
Ω
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