BUZ80A Infineon Technologies, BUZ80A Datasheet - Page 3

• Manufacturer Part Number: BUZ80A
• Description: MOSFET N-CH 800V 3.6A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ80A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ80AIN

Electrical Characteristics, at T
Semiconductor Group
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
GS
GS
GS
GS
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= 50
= 30 V, V
= 50
= 30 V, V
= 50
= 30 V, V
= 50
2
*
I
D *
R
DS
DS
DS
GS
GS
GS
GS
DS(on)max,
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
I
D
D
D
D
D
= 2 A
= 3 A
= 3 A
= 3 A
= 3 A
j
= 25°C, unless otherwise specified
3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
-
-
-
-
-
-
-
1
Values
typ.
3.6
900
95
50
15
65
200
65
max.
-
1350
140
75
25
85
270
85
BUZ 80 A
09/96
Unit
S
pF
ns