BSS84P-E6327 Infineon Technologies, BSS84P-E6327 Datasheet - Page 6

• Manufacturer Part Number: BSS84P-E6327
• Description: MOSFET P-CH 60V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84P-E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS84P; BSS84PE6327XT; BSS84PINTR; BSS84PXTINTR; BSS84PXTINTR; SP000012321

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
Rev 2.4
DS(on)
10
10
10
pF
21
18
16
14
12
10
8
6
4
2
0
-60
2
1
0
0
BSS 84 P
DS
= f (T
)
-20
D
GS
j
)
= -0.17 A, V
5
=0, f=1 MHz
20
98%
typ
Ciss
Coss
Crss
60
10
GS
100
= -10 V
V
°C
T A
- V
DS
180
20
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
2.4
1.8
1.6
1.4
1.2
0.8
0.6
0.4
A
V
-1
-2
-3
2
1
-60
0
0
BSS 84 P
= f (T j )
SD
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
2%
-1.6
typ.
60
98%
-2
100
2006-12-05
BSS 84 P
-2.4
°C
V
V
T A
SD
160
-3