SPA11N60C3 Infineon Technologies, SPA11N60C3 Datasheet - Page 4

• Manufacturer Part Number: SPA11N60C3
• Description: MOSFET N-CH 650V 11A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA11N60C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 380mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 5 ns
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013664; SP000216312; SPA11N60C3IN; SPA11N60C3X; SPA11N60C3XTIN; SPA11N60C3XTIN

Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
Rev
th1
th2
th3
th4
th5
th6
. 3.2
SPP_I
0.015
0.056
0.197
0.216
0.083
0.03
P
tot
(t)
Value
T
j
C
0.056
0.194
0.413
2.522
SPA
0.15
0.03
th1
R
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
T
V
V
di
T
C
GS
R
j
F
=25°C
C
=25°C
=480V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
Page 4
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
,
0.0001878
0.0007106
0.000988
0.002791
0.007285
SPP_I
0.063
E xternal H eatsink
min.
-
-
-
-
-
-
-
Value
Values
0.0001878
0.0007106
1200
0.000988
0.002791
0.007401
typ.
400
41
1
6
0.412
-
-
SPP11N60C3
SPA
2009-11-27
max.
600
1.2
11
33
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs