SPA20N60C3 Infineon Technologies, SPA20N60C3 Datasheet

MOSFET N-CH 650V 20.7A TO220FP

SPA20N60C3

Manufacturer Part Number
SPA20N60C3
Description
MOSFET N-CH 650V 20.7A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPA20N60C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 13.1A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
20.7A
Vgs(th) (max) @ Id
3.9V @ 1mA
Gate Charge (qg) @ Vgs
114nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
34.5W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
20.7A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
190mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
190 m Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20.7 A
Power Dissipation
34.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000013659
SP000216354
SPA20N60C3IN
SPA20N60C3X
SPA20N60C3XTIN
SPA20N60C3XTIN

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• G
T
T
Gate source voltage static
Power dissipation,
Reverse diode dv/dt
Rev.3.1
C
C
V
V
DD
DD
T
PG-TO262
C
7)
G-TO220
G
t
G
= 25°C
p
FP SP000216354
T
j ma x
T
T
jmax
j ma x
P-TO220-3-31
G
E
V
V
P
dv/dt
AR
GS
GS
tot
FP
1
2
3
C3
V
G
DS
±
T
2
jmax
15
±
G-TO220
2009-02-19
V/ns

Related parts for SPA20N60C3

SPA20N60C3 Summary of contents

Page 1

G G-TO220 G PG-TO262 Gate source voltage static Power dissipation 25° Reverse diode dv/dt Rev.3 ...

Page 2

wavesoldering Rev.3.1 R thJC R thJA V (BR)DSS µ Page ...

Page 3

Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate to source charge Gate to drain charge 0 J-STD20 and JESD22 7 I <=I , di/dt<=400A/us DClink Rev.3.1 ...

Page 4

Inverse diode direct current, pulsed Reverse recovery time Reverse recovery charge Peak reverse recovery current I Rev.3. / rrm T j 9-02-19 ...

Page 5

0.001 0. 0 Rev.3.1 P tot T ...

Page 6

Rev.3 9-02-19 ...

Page 7

Ω ≥ Rev.3.1 Ω 9-02-19 ...

Page 8

Rev.3 di/ Ω Ω Ω 9-02-19 ...

Page 9

Rev.3 Ω Ω ≤ Ω 09-02-19 ...

Page 10

Rev.3 (BR)DSS 9-02-19 ...

Page 11

C oss Rev.3 9-02-19 ...

Page 12

... PG-TO220-3-1, PG-TO220-3-21 : Outline Rev.3.1 SPI20N60C3, SPA20N60C3 Page 12 SPP20N60C3 2009-02-19 ...

Page 13

... PG-TO220-3-31/-3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev.3.1 SPI20N60C3, SPA20N60C3 Page 13 SPP20N60C3 2009-02-19 ...

Page 14

... PG-TO262-3-1/PG-TO262-3-21 (I²-PAK) Rev.3.1 SPI20N60C3, SPA20N60C3 Page 14 SPP20N60C3 2009-02-19 ...

Page 15

... München Germany 2006 Rev.3.1 SPI20N60C3, SPA20N60C3 5 SPP20N60C3 9-02-19 ...

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