SPA20N60C3 Infineon Technologies, SPA20N60C3 Datasheet - Page 14

• Manufacturer Part Number: SPA20N60C3
• Description: MOSFET N-CH 650V 20.7A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA20N60C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 20.7A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 34.5W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20.7A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 190mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 190 m Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20.7 A
• Power Dissipation: 34.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000013659; SP000216354; SPA20N60C3IN; SPA20N60C3X; SPA20N60C3XTIN; SPA20N60C3XTIN

SPP20N60C3
SPI20N60C3, SPA20N60C3
PG-TO262-3-1/PG-TO262-3-21 (I²-PAK)
Rev.3.1
2009-02-19
Page 14