BSO303SP Infineon Technologies, BSO303SP Datasheet

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BSO303SP

Manufacturer Part Number
BSO303SP
Description
MOSFET P-CH 30V 8.9A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO303SP

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
1754pF @ 25V
Power - Max
2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
31 m Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 8.9 A
Power Dissipation
2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO303SPINTR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO303SP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO303SP H
Manufacturer:
INFINEON/英飞凌
Quantity:
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OptiMOS
Feature
• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Type
BSO303SP
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Rev.1.2
A
A
A
A
=-8.9A, V
=-8.9 A , V
=25°C
=70°C
=25°C
=25°C
DS
DD
TM
=-24V, di/dt=200A/µs, T
=-25V, R
-P Power-Transistor
Package
P-SO 8
GS
=25Ω
j
= 25 °C, unless otherwise specified
jmax
=150°C
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
S
S
S
G
1
2
3
4
Top View
-55... +150
55/150/56
Product Summary
V
R
I
8
7
6
5
SIS00062
D
Value
-35.6
DS
DS(on)
2.35
-8.9
-7.1
±20
D
D
D
D
97
-6
BSO303SP
2002-01-08
-8.9
-30
21
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

Related parts for BSO303SP

BSO303SP Summary of contents

Page 1

... Gate source voltage Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 Symbol puls E AS dv/dt =150°C jmax tot stg Page 1 BSO303SP Product Summary V - DS(on Top View SIS00062 Value -8.9 -7 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO303SP Values Unit min. typ. max K 110 - - 53 Values Unit min. typ. max. - ...

Page 3

... DD GS d(on =-1A, R =6Ω d(off =-24V, I =-8. =-24V, I =-8.9A -10V GS V (plateau) V =-24V, I =-8. =25° = =-15V /dt=100A/µ Page 3 BSO303SP Values Unit min. typ. max 1754 - pF - 465 - - 389 - - 10 40.3 60.5 - -4.1 -6 -15.8 -26 - -46 - -35.6 - -0.87 -1. 11.7 17.6 nC 2002-01-08 ...

Page 4

... A 1 -10 0 -10 -1 - -10 -10 Rev.1.2 2 Drain current parameter: |V -10 A °C 100 120 160 Transient thermal impedance Z thJS parameter : K 76.0µs 100 µ - Page 4 BSO303SP ) A |≥ BSO303SP - 100 = BSO303SP single pulse - 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2002-01-08 ...

Page 5

... Typ. drain-source on resistance R DS(on) parameter: V Ω Vgs= - 3.5V 0.08 0.07 0.06 Vgs= -3V 0.05 0.04 0.03 0.02 Vgs= -2. Typ. forward transconductance | f(I DS(on)max fs parameter µs 2 Page 5 BSO303SP = 0.1 Vgs = - 3V Vgs = - 3.5V Vgs = - 4V Vgs = - 4.5V Vgs Vgs = - 5.5V Vgs = - 6V Vgs = - 8V Vgs = - 10V =25° ...

Page 6

... GS(th) parameter -10 V 2.5 1.5 1 0.5 0 °C 100 160 - Forward character. of reverse diode parameter - iss 1 -10 C oss 0 -10 C rss -1 - Page 6 BSO303SP = max typ min - 100 ) µs p BSO303SP °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 2002-01-08 160 -2 ...

Page 7

... DD GS 100 Drain-source breakdown voltage (BR)DSS j BSO303SP -36 V -34 -33 -32 -31 -30 -29 -28 -27 -60 - Rev.1.2 14 Typ. gate charge V GS parameter: I 100 °C 150 T j 100 °C 180 T j Page Gate = -8.9 A pulsed D BSO303SP -16 V -12 - max 0 max -6 0 max - BSO303SP Gate 2002-01-08 ...

Page 8

... Rev.1.2 Page 8 BSO303SP 2002-01-08 ...

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