BSO303SP Infineon Technologies, BSO303SP Datasheet - Page 4

• Manufacturer Part Number: BSO303SP
• Description: MOSFET P-CH 30V 8.9A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 1754pF @ 25V
• Power - Max: 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 m Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 8.9 A
• Power Dissipation: 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO303SPINTR

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
Rev.1.2
-10
-10
-10
-10
-10
= f (T
W
2.6
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
2
1
0
2
1
0
-10
0
BSO303SP
BSO303SP
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
120
1
DC
t p = 76.0µs
°C
V
100 µs
1 ms
10 ms
T
V
A
DS
160
-10
Page 4
2
2 Drain current
I
parameter: |V
4 Transient thermal impedance
Z
parameter : D = t
D
thJS
= f (T
K/W
10
10
10
10
10
10
10
-10
A
-8
-7
-6
-5
-4
-3
-2
-1
= f (t
-1
-2
-3
-4
0
2
1
0
10
0
A
BSO303SP
BSO303SP
-7
)
p
20
10
)
single pulse
-6
GS
40
10
|≥ 10 V
p
/T
-5
60
10
-4
80
10
100
-3
BSO303SP
10
2002-01-08
120
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0