IPD09N03LA G Infineon Technologies, IPD09N03LA G Datasheet - Page 5

• Manufacturer Part Number: IPD09N03LA G
• Description: MOSFET N-CH 25V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD09N03LA G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 1642pF @ 15V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD09N03LA; IPD09N03LAG; IPD09N03LAGINTR; IPD09N03LAGXT; IPD09N03LAGXTINTR; IPD09N03LAGXTINTR; IPD09N03LAINTR; IPD09N03LAINTR; SP000017536

Rev. 2.12
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
100
60
50
40
30
20
10
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
10 V
j
GS
DS
|>2|I
1
4.5 V
D
|R
1
DS(on)max
2
V
V
175 °C
GS
DS
[V]
[V]
3
2
25 °C
4
2.8 V
3.5 V
3.8 V
3.2 V
3 V
4.1 V
page 5
5
3
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
28
24
20
16
12
60
50
40
30
20
10
D
=f(I
8
4
0
0
); T
0
0
D
j
); T
=25 °C
3.2 V
GS
10
IPS09N03LA G
j
=25 °C
IPD09N03LA G
3.5 V
20
20
I
I
D
D
30
[A]
[A]
3.8 V
40
40
IPU09N03LA G
IPF09N03LA G
4.1 V
50
4.5 V
10 V
2008-04-14
60
60